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| integrated silicon solution, inc. ? 1-800-379-4774 1 rev. b 05/24/06 issi ? is42s32800b 2m words x 32 bits x 4 banks (256-mbit) synchronous dynamic ram features concurrent auto precharge clock rate:166/143 mhz fully synchronous operation internal pipelined architecture four internal banks (2m x 32bit x 4bank) programmable mode -cas#latency:2 or 3 -burst length:1,2,4,8,or full page -burst type:interleaved or linear burst -burst-read-single-write burst stop function individual byte controlled by dqm0-3 auto refresh and self refresh 4096 refresh cycles/64ms (15.6 s/row) single +3.3v 0.3v power supply interface:lvttl package: 86 pin tsop-2,0.50mm pin pitch 8x13mm, 90 ball bga, ball pitch 0.8mm pb-free package is available. description the issi is42s32800b is a high-speed cmos configured as a quad 2m x 32 dram with a synchronous interface (all signals are registered on the positive edge of the clock signal,clk). each of the 2m x 32 bit banks is organized as 4096 rows by 512 columns by 32 bits.read and write accesses start at a selected locations in a programmed sequence. accesses begin with the registration of a bankactive command which is then followed by a read or write command the issi is42s32800b provides for programmable read or write burst lengths of 1,2,4,8,or full page, with a burst termination operation. an auto precharge function may be enable to provide a self-timed row precharge that is initiated at the end of the burst sequence.the refresh functions, either auto or self refresh are easy to use. by having a programmable mode register,the system can choose the most suitable modes to maximize its performance. these devices are well suited for applications requiring high memory bandwidth.
2 integrated silicon solution, inc. ? 1-800-379-4774 rev. b 05/24/06 issi ? is42s32800b functional block diagram column counter address buffer a0 a9 bs0 bs1 dqm0~3 clock buffer command decoder sense ampl ifier row decoder sense ampl ifier column decoder row decoder clk cke cs# ras# cas# we# dq0 dq31 sense ampl ifier col um n decoder row decoder sense amplifier column decoder row decoder 4096 x 512 x 32 cell array (bank #2) dq buffer a 10/ap refresh counter mode register control signal generator column decoder 4096 x 512 x 32 cell array (bank #0) 4096 x 512 x 32 cell array (bank #1) 4096 x 512 x 32 cell array (bank #3) a11 integrated silicon solution, inc. ? 1-800-379-4774 3 rev. b 05/24/06 issi ? is42s32800b pin descriptions table 1.pin details of is42s32800b symbol type description clk input clock: clk is driven by the system clock.all sdram input signals are sampled on the positive edge of clk.clk also increments the internal burst counter and controls the output registers. cke input clock enable: cke activates(high)and deactivates(low)the clk signal.if cke goes low syn- chronously with clock(set-up and hold time same as other inputs),the internal clock is suspended from the next clock cycle and the state of output and burst address is frozen as long as the cke remains low.when all banks are in the idle state,deactivating the clock controls the entry to the power down and self refresh modes.cke is synchronous except after the device enters power down and self refresh modes,where cke becomes asynchronous until exiting the same mode. the input buffers,including clk,are disabled during power down and self refresh modes,providing low standby power. bs0,bs1 input bank select: bs0 and bs1 defines to which bank the bankactivate,read,write,or bankprecharge command is being applied. a0-a11 input address inputs: a0-a11 are sampled during the bankactivate command (row address a0-a11)and read/write command (column address a0-a7 with a10 defining auto precharge) to select one location in the respective bank.during a precharge command,a10 is sampled to determine if all banks are to be precharged (a10 =high). the address inputs also provide the op-code during a mode register set . cs# input chip select: cs#enables (sampled low)and disables (sampled high)the command decoder.all commands are masked when cs#is sampled high.cs#provides for external bank selection on systems with multiple banks.it is considered part of the command code. ras# input row address strobe: the ras#signal defines the operation commands in conjunction with the cas#and we#signals and is latched at the positive edges of clk.when ras# and cs#are as- serted ?low?and cas#is asserted ?high,?either the bankactivate command or the precharge command is selected by the we#signal.when the we#is asserted ?high,?the bankactivate com- mand is selected and the bank designated by bs is turned on to the active state.when the we#is asserted ?low,?the precharge command is selected and the bank designated by bs is switched to the idle state after the precharge operation. cas# input column address strobe: the cas#signal defines the operation commands in conjunction with the ras#and we#signals and is latched at the positive edges of clk. when ras#is held ?high?and cs#is asserted ?low,?the column access is started by asserting cas#?low.?then,the read or write command is selected by asserting we# ?low?or ?high.? we# input write enable: the we#signal defines the operation commands in conjunction with the ras#and cas#signals and is latched at the positive edges of clk.the we#input is used to select the bankactivate or precharge command and read or write command. dqm0-3 input data input/output mask: dqm0-dqm3 are byte specific,nonpersistent i/o buffer controls. the i/o buffers are placed in a high-z state when dqm is sampled high.input data is masked when dqm is sampled high during a write cycle.output data is masked (two-clock latency)when dqm is sampled high during a read cycle.dqm3 masks dq31-dq24,dqm2 masks dq23-dq16,dqm1 masks dq15-dq8,and dqm0 masks dq7-dq0. dq0-31 input/output data i/o: the dq0-31 input and output data are synchronized with the positive edges of clk.the i/os are byte-maskable during reads and writes. 4 integrated silicon solution, inc. ? 1-800-379-4774 rev. b 05/24/06 issi ? is42s32800b pin configurations 86 pin tsop - type ii for x32 pin descriptions a0-a11 row address input a0-a8 column address input ba0, ba1 bank select address dq0 to dq31 data i/o c l k system clock input c k e clock enable cs chip select ras row address strobe command cas column address strobe command v dd dq0 v dd q dq1 dq2 v ss q dq3 dq4 v dd q dq5 dq6 v ss q dq7 nc v dd dqm0 we cas ras cs a11 ba0 ba1 a10 a0 a1 a2 dqm2 v dd nc dq16 v ss q dq17 dq18 v dd q dq19 dq20 v ss q dq21 dq22 v dd q dq23 v dd 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 86 85 84 83 82 81 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 v ss dq15 v ss q dq14 dq13 v dd q dq12 dq11 v ss q dq10 dq9 v dd q dq8 nc v ss dqm1 nc nc clk cke a9 a8 a7 a6 a5 a4 a3 dqm3 v ss nc dq31 v dd q dq30 dq29 v ss q dq28 dq27 v dd q dq26 dq25 v ss q dq24 v ss we write enable dqm0-dqm3 x32 input/output mask v dd power vss ground v ddq power supply for i/o pin vss q ground for i/o pin nc no connection integrated silicon solution, inc. ? 1-800-379-4774 5 rev. b 05/24/06 issi ? is42s32800b pin configuration package code: b 90 ball fbga (top view) (8.00 mm x 13.00 mm body, 0.8 mm ball pitch) 1 2 3 4 5 6 7 8 9 a b c d e f g h j k l m n p r dq26 dq28 vssq vssq vddq vss a4 a7 clk dqm1 vddq vssq vssq dq11 dq13 dq24 vddq dq27 dq29 dq31 dqm3 a5 a8 cke nc dq8 dq10 dq12 vddq dq15 vss vssq dq25 dq30 nc a3 a6 nc a9 nc vss dq9 dq14 vssq vss vdd vddq dq22 dq17 nc a2 a10 nc ba0 cas vdd dq6 dq1 vddq vdd dq23 vssq dq20 dq18 dq16 dqm2 a0 ba1 cs we dq7 dq5 dq3 vssq dq0 dq21 dq19 vddq vddq vssq vdd a1 a11 ras dqm0 vssq vddq vddq dq4 dq2 pin descriptions a0-a11 row address input a0-a8 column address input ba0, ba1 bank select address dq0 to dq31 data i/o clk system clock input cke clock enable cs chip select ras row address strobe command cas column address strobe command we write enable dqm0-dqm3 x32 input/output mask v dd power vss ground v ddq power supply for i/o pin vss q ground for i/o pin nc no connection 6 integrated silicon solution, inc. ? 1-800-379-4774 rev. b 05/24/06 issi ? is42s32800b operation mode fully synchronous operations are performed to latch the commands at the positive edges of clk.table 2 shows the truth table for the operation commands. table 2.truth table (note (1),(2)) note: 1. v =valid,x =don ?t care,l =logic low,h =logic high 2. cken signal is input level when commands are provided. cken-1 signal is input level one clock cycle before the commands are provided. 3. these are states of bank designated by bs signal. 4. device state is 1,2,4,8,and full page burst operation. 5. power down mode can not enter in the burst operation. when this command is asserted in the burst cycle,device state is clock suspend mode. 6. dqm0-3 command state cken-1 cke dqm (6) bs0,1 a10 a11,a9-0 cs# ras# cas# we# bankactivate idle (3) h x x v row address l l h h bankprecharge any h x x v l x l l h l prechargeall any h x x x h x l l h l write active (3) hxxvl lhll write and auto precharge active (3) hxxvh lhll read active (3) hxxvl lhlh read and autoprecharge active (3) hxxvh lhlh mode register set idle h x x op code l l l l no-operation any h x x x x x l h h h burst stop active (4) hxxxxx lhhl device deselect any h x x x x x h x x x autorefresh idle h h x x x x l l l h selfrefresh entry idle h l x x x x l l l h selfrefresh exit idle l h x x x x h x x x (selfrefresh) l h h h clock suspend mode entry active h l x x x x x x x x power down mode entry any (5) hlxxxx hxxx lh h h clock suspend mode exit active l h x x x x x x x x power down mode exit any l h x x x x h x x x (powerdown) l h h h data write/output enable active h x l x x x x x x x data mask/output disable active h x h x x x x x x x column address (a0 ~a7) column address (a0 ~a7) integrated silicon solution, inc. ? 1-800-379-4774 7 rev. b 05/24/06 issi ? is42s32800b commands 1 bankactivate (ras#=?l?,cas#=?h?,we#=?h?,bs =bank,a0-a11 =row address) the bankactivate command activates the idle bank designated by the bs0,1 (bank select) signal.by latching the row address on a0 to a11 at the time of this command,the selected row access is initiated.the read or write operation in the same bank can occur after a time delay of trcd(min.)from the time of bank activation.a subsequent bankactivate command to a different row in the same bank can only be issued after the previous active row has been precharged (refer to the following figure).the minimum time interval between successive bankactivate commands to the same bank is defined by trc(min.).the sdram has four internal banks on the same chip and shares part of the internal circuitry to reduce chip area;therefore it restricts the back-to-back activation of the four banks.trrd(min.)specifies the minimum time required between activating different banks. after this command is used,the write command and the block write command perform the no mask write operation. clk address t0 t1 t2 t3 tn+3 tn+4 tn+5 tn+6 .............. command .............. .............. nop nop nop nop ras# - cas# delay ( t rcd ) ras#- ras# delay time ( t rrd ) ras# cycle time ( t rc ) bank a row addr. bank a col addr. bank b row addr. bank a row addr. bank a activate r/w a with autoprecharge bank b activate bank a activate auto precharge begin :"h" or "l" bank 2 bankprecharge command (ras#=?l?,cas#=?h?,we#=?l?,bs =bank,a10 =?l?) the bankprecharge command precharges the bank disignated by bs0,1 signal.the precharged bank is switched from the active state to the idle state.this command can be asserted anytime after tras(min.)is satisfied from the bankactivate command in the desired bank.the maximum time any bank can be active is specified by tras(max.).therefore,the precharge function must be performed in any active bank within tras(max.).at the end of precharge,the precharged bank is still in the idle state and is ready to be activated again. 8 integrated silicon solution, inc. ? 1-800-379-4774 rev. b 05/24/06 issi ? is42s32800b 3 prechargeall command (ras#=?l?,cas#=?h?,we#=?l?,bs =don t care,a10 =?h?) the precharge all command precharges all the four banks simultaneously and can be issued even if all banks are not in the active state. all banks are then switched to the idle state. 4 read command (ras#=?h?,cas#=?l?,we#=?h?,bs =bank,a10 =?l?,a0-a7 =column address) the read command is used to read a burst of data on consecutive clock cycles from an active row in an active bank.the bank must be active for at least trcd(min.) before the read command is issued.during read bursts, the valid data-out element from the starting column address will be available following the cas# latency after the issue of the read command.each subsequent data- out element will be valid by the next positive clock edge (refer to the following figure).the dqs go into high-impedance at the end of the burst unless other command is initiated. the burst length,burst sequence,and cas# latency are determined by the mode register which is already programmed.a full-page burst will continue until terminated (at the end of the page it will wrap to column 0 and continue). integrated silicon solution, inc. ? 1-800-379-4774 9 rev. b 05/24/06 issi ? is42s32800b t0 t2 t1 t3 t4 t5 t6 t7 t8 read a nop nop nop nop nop nop nop nop dout a 0 dout a 1 dout a 2 dout a 3 dout a 0 dout a 1 dout a 2 dout a 3 clk command cas# latency=2 t ck2 , dq s cas# latency=3 t ck3 , dq s read a read b nop nop nop nop nop nop nop dout a 0 dout b 0 dout b 1 dout b 2 dout b 3 dout a 0 dout b 0 dout b 1 dout b 3 2 dout b clk command cas# latency=2 t ck2 , dq s cas# latency=3 t ck3 , dq s t0 t2 t1 t3 t4 t5 t6 t7 t8 burst read operation(burst length =4,cas#latency =2,3) the read data appears on the dqs subject to the values on the dqm inputs two clocks earlier (i.e.dqm latency is two clocks for output buffers). a read burst without the auto precharge function may be interrupted by a subsequent read or write command to the same bank or the other active bank before the end of the burst length.it may be interrupted by a bankprecharge/prechargeall command to the same bank too.the interrupt coming from the read command can occur on any clock cycle following a previous read command (refer to the following figure). read interrupted by a read (burst length =4,cas#latency =2,3) the dqm inputs are used to avoid i/o contention on the dq pins when the interrupt comes from a write command.the dqms must be asserted (high)at least two clocks prior to the write command to suppress data-out on the dq pins.to guarantee the dq pins against i/o contention,a single cycle with high-impedance on the dq pins must occur between the last read data and the write command (refer to the following three figures).if the data output of the burst read occurs at the second clock of the burst write,the dqms must be asserted (high)at least one clock prior to the write command to avoid internal bus contention. 10 integrated silicon solution, inc. ? 1-800-379-4774 rev. b 05/24/06 issi ? is42s32800b read a nop nop nop nop write b nop nop dqm command dq?s nop dout a dinb 2 dinb 1 dinb 0 must be hi-z before the write com mand : "h" or "l" clk t0 t2 t1 t3 t4 t5 t6 t7 t8 clk dqm command nop nop nop nop nop banka activat e din a 0 din a 1 din a 2 din a 3 1 clk interval cas# latency=2 read a writea : "h" or "l" nop t0 t2 t1 t3 t4 t5 t6 t7 t8 tck2, dqs clk dqm command nop read a nop nop nop nop din b 0 din b 1 din b 2 din b 3 cas# latency=2 nop nop : "h" or "l" t ck2 , dq?s t0 t2 t1 t3 t4 t5 t6 t7 t8 writeb tck2, dqs read to write interval (burst length = 4,cas#latency =3) read to write interval (burst length = 4,cas#latency =2) read to write interval (burst length = 4,cas#latency =2) a read burst without the auto precharge function may be interrupted by a bankprecharge/ prechargeall command to the same bank.the following figure shows the optimum time that bankprecharge/prechargeall command is issued in different cas#latency. integrated silicon solution, inc. ? 1-800-379-4774 11 rev. b 05/24/06 issi ? is42s32800b read to precharge (cas#latency =2,3) 5 write command (ras#=?h?,cas#=?l?,we#=?l?,bs =bank,a10 =?l?,a0-a7 =column address) the write command is used to write a burst of data on consecutive clock cycles from an active row in an active bank.the bank must be active for at least trcd(min.)before the write command is issued.during write bursts, the first valid data-in element will be registered coincident with the write command.subsequent data elements will be registered on each successive positive clock edge (refer to the following figure).the dqs remain with high- impedance at the end of the burst unless another command is initiated.the burst length and burst sequence are determined by the mode register,which is already programmed.a full-page burst will continue until terminated (at the end of the page it will wrap to column 0 and continue). clk command read a nop nop nop nop activate nop nop precharge dout a 0 dout a 1 dout a 2 dout a 3 dout a 0 dout a 1 dout a 2 dout a 3 address t rp bank, col a bank(s) cas# latency=2 t ck2 , dq s cas# latency=3 t ck3 , dq s t0 t2 t1 t3 t4 t5 t6 t7 t8 bank, row clk command din a 3 nop writea i nop nop nop nop nop nop nop din a 0 din a 1 din a 2 dq0 - dq3 the first data element and the write are registered on the same clock edge. extra data is masked. don?t care t0 t2 t1 t3 t4 t5 t6 t7 t8 burst write operation (burst length =4,cas#latency =2,3) a write burst without the autoprecharge function may be interrupted by a subsequent write, bankprecharge/ prechargeall,or read command before the end of the burst length.an interrupt coming from write command can occur on any clock cycle following the previous write command (refer to the following figure). 12 integrated silicon solution, inc. ? 1-800-379-4774 rev. b 05/24/06 issi ? is42s32800b clk command din b 2 nop writea writeb nop nop nop nop nop nop din a 0 din b 0 din b 1 dq?s din b 3 1 clk interval t0 t2 t1 t3 t4 t5 t6 t7 t8 clk command t0t 1 t2t3 t4t5 t6t7 t8 nop writea nop nop nop nop nop read b nop din a 0 don?t care dout b 2 dout b 0 dout b 1 dout b 3 din a 0 don?t care don?t care dout b 2 dout b 0 dout b 1 dout b 3 di n input data must be removed from the dqs at least one clock cycle before the read data appears on the outputs to avoid data contention. input data for the write is masked. cas# latency=2 t ck2 , dq?s cas# latency=3 t ck3 , dq?s clk write command bank (s) row nop nop precharge nop nop activate bank col n din nn + 1 dqm address dq t wr t rp : don t care t0 t2 t1 t3 t4 t5 t6 write interrupted by a write (burst length =4,cas#latency =2,3) the read command that interrupts a write burst without auto precharge function should be issued one cycle after the clock edge in which the last data-in element is registered.in order to avoid data contention,input data must be removed from the dqs at least one clock cycle before the first read data appears on the outputs (refer to the following figure).once the read command is registered,the data inputs will be ignored and writes will not be executed. write interrupted by a read (burst length =4,cas#latency =2,3) the bankprecharge/prechargeall command that interrupts a write burst without the auto precharge function should be issued m cycles after the clock edge in which the last data-in element is registered,where m equals twr/ tck rounded up to the next whole number.in addition,the dqm signals must be used to mask input data,starting with the clock edge following the last data-in element and ending with the clock edge on which the bankprecharge/ prechargeall command is entered (refer to the following figure). note: the dqms can remain low in this example if the length of the write burst is 1 or 2. write to precharge integrated silicon solution, inc. ? 1-800-379-4774 13 rev. b 05/24/06 issi ? is42s32800b don t care clk dq d out a t2 t1 t4 t3 t6 t5 t0 command read - ap bank n nop nop nop nop d out a + 1 d out d d out d + 1 nop t7 bank n cas latency = 3 (bank m) bank m address idle nop note: dqm is low. bank n, col a bank m, col d read - ap bank m internal states t page active read with burst of 4 interrupt burst, precharge page active read with burst of 4 precharge rp - bank n t rp - bank m cas latency = 3 (bank n) 6 concurrent auto precharge an access command (read or write) to another bank while an access command with auto precharge enabled is executing is not allowed by sdrams, unless the sdram supports concurrent auto precharge. icsi sdrams support concurrent auto precharge. four cases where concurrent auto precharge occurs are defined below. read with auto precharge interrupted by a read (with or without auto precharge): a read to bank m will interrupt a read on bank n, cas latency later. the precharge to bank n will begin when the read to bank m is regis-tered. read with auto precharge interrupted by a read interrupted by a write (with or without auto precharge): a write to bank m will interrupt a read on bank n when registered. dqm should be used two clocks prior to the write command to prevent bus contention. the precharge to bank n will begin when the write to bank m is registered. read with auto precharge interrupted by a write clk dq d out a t2 t1 t4 t3 t6 t5 t0 command nop nop nop nop d in d + 1 d in d d in d + 2 d in d + 3 nop t7 bank n bank m address idle nop dqm note: 1. dqm is high at t2 to prevent d out -a+1 from contending with d in -d at t4. bank n, col a bank m, col d write - ap bank m internal states t page active read with burst of 4 interrupt burst, precharge page active write with burst of 4 write-back rp - bank n t wr - bank m cas latency = 3 (bank n) read - ap bank n 1 don?t care 14 integrated silicon solution, inc. ? 1-800-379-4774 rev. b 05/24/06 issi ? is42s32800b write with auto precharge interrupted by a read (with or without auto precharge): a read to bank m will interrupt a write on bank n when registered, with the data-out ap- pearing cas latency later. the precharge to bank n will begin after t wr is met, where t wr begins when the read to bank m is registered. the last valid write to bank n will be data-in registered one clock prior to the read to bank m. write with auto precharge interrupted by a read interrupted by a write (with or without auto precharge): a write to bank m will interrupt a write on bank n when registered. the precharge to bank n will begin after t wr is met, where t wr begins when the write to bank m is registered. the last valid data write to bank n will be data registered one clock prior to a write to bank m. write with auto precharge interrupted by a write d in a d in d + 2 d in d + 3 don?t care t2 t1 t4 t3 t6 t5 t0 command t7 bank n nop d in d + 1 write - ap bank n nop nop nop note: 1. dqm is low. bank n, col a bank m, col d write - ap bank m nop d in a + 1 d in a + 2 d in d page active write with burst of 4 write-back wr - bank n t rp - bank n t wr - bank m bank m address internal states t page active write with burst of 4 interrupt burst, write-back precharge t2 t1 t4 t3 t6 t5 t0 command write - ap bank n nop nop nop nop note: 1. dqm is low. bank n, col a bank m, col d read - ap bank m nop nop page active read with burst of 4 internal states t page active write with burst of 4 interrupt burst, write-back precharge wr - bank n rp - bank n t t rp - bank m t7 bank n bank m address clk dq d in a d in a + 1 d out d d out d + 1 cas latency = 3 (bank m) don?t car e integrated silicon solution, inc. ? 1-800-379-4774 15 rev. b 05/24/06 issi ? is42s32800b 7 mode register set command (ras#=?l?,cas#=?l?,we#=?l?,bs0,1 and a11-a0 =register data) the mode register stores the data for controlling the various operating modes of sdram.the mode register set command programs the values of cas#latency,addressing mode and burst length in the mode register to make sdram useful for a variety of different applications.the default values of the mode register after power-up are undefined;therefore this command must be issued at the power-up sequence.the state of pins bs0,1 and a11~a0 in the same cycle is the data written to the mode register.one clock cycle is required to complete the write in the mode register (refer to the following figure).the contents of the mode register can be changed using the same command and the clock cycle requirements during operation as long as all banks are in the idle state. 16 integrated silicon solution, inc. ? 1-800-379-4774 rev. b 05/24/06 issi ? is42s32800b mode register set cycle the mode register is divided into various fields depending on functionality. *note:rfu (reserved for future use)should stay 0 during mrs cycle. ?d ?d ?d ?d ?d burst length field (a2~a0) this field specifies the data length of column access using the a2~a0 pins and selects the burst length to be 2, 4,8,or full page. ras# clk cke cs# cas# we# addr. dqm dq t ck2 clock min. address key t rp hi-z precharge all mode register set command any command t0 t2 t1 t3 t4 t5 t6 t7 t8 t9 t10 a2 a1 a0 burst length 0001 0012 0104 0118 1 0 0 reserved 1 0 1 reserved 1 1 0 reserved 1 1 1 full page address bs0,1 a11/a10 a9 a8 a7 a6 a5 a4 a3 a2 a1 a0 function rfu* wbl test mode cas latency bt burst length integrated silicon solution, inc. ? 1-800-379-4774 17 rev. b 05/24/06 issi ? is42s32800b data n 0 1234567 -255256257 - column address n n+1 n+2 n+3 n+4 n+5 n+6 n+7 - n+255 n n+1 - 2 words: burst length 4 words: 8 words: full page: column address is repeated until terminated. data n column address burst lengt h data 0 a7 a6 a5 a4 a3 a2 a1 a0 data 1 a7 a6 a5 a4 a3 a2 a1 a0# 4 words data 2 a7 a6 a5 a4 a3 a2 a1# a0 data 3 a7 a6 a5 a4 a3 a2 a1# a0# 8 words data 4 a7 a6 a5 a4 a3 a2# a1 a0 data 5 a7 a6 a5 a4 a3 a2# a1 a0# data 6 a7 a6 a5 a4 a3 a2# a1# a0 data 7 a7 a6 a5 a4 a3 a2# a1# a0# ? burst type field (a3) the burst type can be one of two modes,interleave mode or sequential mode. ?addressing sequence of sequential mode an internal column address is performed by increasing the address from the column address which is input to the device.the internal column address is varied by the burst length as shown in the following table.when the value of column address,(n +m),in the table is larger than 255,only the least significant 8 bits are effective. ? addressing sequence of interleave mode a column access is started in the input column address and is performed by inverting the address bits in the sequence shown in the following table. ? cas#latency field (a6~a4) this field specifies the number of clock cycles from the assertion of the read command to the first read data.the minimum whole value of cas#latency depends on the frequency of clk.the minimum whole value satisfying the following formula must be programmed into this field. t cac (min)<=cas#latency x t ck a6 a5 a4 cas#latency 0 0 0 reserved 0 0 1 reserved 0 1 0 2 clocks 0 1 1 3 clocks 1 x x reserved a3 burst type 0 sequential 1 interleave 18 integrated silicon solution, inc. ? 1-800-379-4774 rev. b 05/24/06 issi ? is42s32800b ? test mode field (a8~a7) these two bits are used to enter the test mode and must be programmed to ?00?in normal operation. ? write burst length (a9) this bit is used to select the burst write length. 8 no-operation command (ras#=?h?,cas#=?h?,we#=?h?) the no-operation command is used to perform a nop to the sdram which is selected (cs# is low).this prevents unwanted commands from being registered during idle or wait states. 9 burst stop command (ras#=?h?,cas#=?h?,we#=?l?) the burst stop command is used to terminate either fixed-length or full-page bursts.this command is only effective in a read/write burst without the auto precharge function.the terminated read burst ends after a delay equal to the cas#latency (refer to the following figure).the termination of a write burst is shown in the following figure. termination of a burst read operation (burst length > 4 ,cas#latency =2,3) termination of a burst write operation (burst length =x) clk command t0t 1t2t3 t4t5 t6t7 t 8 read a nop nop nop nop nop nop nop cas# latency = 2 tck2,dq?s dout a 0 dout a 1 dout a 2 dout a 3 dout a 0 dout a 1 dout a 2 dout a 3 cas# latency = 3 tck3,dq?s the burst ends after a delay equal to the cas# latency. burst stop cl k comman d t0t 1t2t3t4t5t6t7t 8 nop write a nop nop nop nop nop nop burst stop cas# latency=2,3 dq?s din a 0 din a 1 din a 2 don?t care input data for the write is masked. a8 a7 test mode 0 0 normal mode 0 1 vendor use only 1 x vendor use only a9 write burst length 0 burst 1 single bit integrated silicon solution, inc. ? 1-800-379-4774 19 rev. b 05/24/06 issi ? is42s32800b 10 device deselect command (cs#=?h?) the device deselect command disables the command decoder so that the ras#,cas#,we# and address inputs are ignored,regardless of whether the clk is enabled.this command is similar to the no operation command. 11 autorefresh command (ras#=?l?,cas#=?l?,we#=?h?,cke =?h?) the autorefresh command is used during normal operation of the sdram and is analogous to cas#-before- ras#(cbr)refresh in conventional drams.this command is non-persistent,so it must be issued each time a refresh is required.the addressing is generated by the internal refresh controller.this makes the address bits a ?don ?t care?during an autorefresh command.the internal refresh counter increments automatically on every auto refresh cycle to all of the rows.the refresh operation must be performed 4096 times within 64ms.the time required to complete the auto refresh operation is specified by trc(min.).to provide the autorefresh command, all banks need to be in the idle state and the device must not be in power down mode (cke is high in the previous cycle).this command must be followed by nops until the auto refresh operation is completed.the precharge time requirement,trp(min),must be met before successive auto refresh operations are performed. 12 selfrefresh entry command (ras#=?l?,cas#=?l?,we#=?h?,cke =?l?) the selfrefresh is another refresh mode available in the sdram.it is the preferred refresh mode for data retention and low power operation.once the selfrefresh command is registered,all the inputs to the sdram become ?don ?t care?with the exception of cke,which must remain low.the refresh addressing and timing is internally generated to reduce power consumption.the sdram may remain in selfrefresh mode for an indefinite period. the selfrefresh mode is exited by restarting the external clock and then asserting high on cke (selfrefresh exit command). 13 selfrefresh exit command (cke =?h?,cs#=?h?or cke =?h?,ras#=?h?,cas#=?h?,we#=?h?) this command is used to exit from the selfrefresh mode.once this command is registered, nop or device deselect commands must be issued for trc(min.)because time is required for the completion of any bank currently being internally refreshed.if auto refresh cycles in bursts are performed during normal operation,a burst of 4096 auto refresh cycles should be completed just prior to entering and just after exiting the selfrefresh mode. 14 clock suspend mode entry /powerdown mode entry command (cke =?l?) when the sdram is operating the burst cycle,the internal clk is suspended(masked)from the subsequent cycle by issuing this command (asserting cke ?low?).the device operation is held intact while clk is suspended.on the other hand,when all banks are in the idle state,this command performs entry into the powerdown mode.all input and output buffers (except the cke buffer)are turned off in the powerdown mode.the device may not remain in the clock suspend or powerdown state longer than the refresh period (64ms)since the command does not perform any refresh operations. 15 clock suspend mode exit /powerdown mode exit command when the internal clk has been suspended,the operation of the internal clk is einitiated from the subsequent cycle by providing this command (asserting cke ?high?).when the device is in the powerdown mode,the device exits this mode and all disabled buffers are turned on to the active state.t pde (min.)is required when the device exits from the powerdown mode.any subsequent commands can be issued after one clock cycle from the end of this command. 16 data write /output enable,data mask /output disable command (dqm =?l?,?h?) during a write cycle,the dqm signal functions as a data mask and can control every word of the input data.during a read cycle,the dqm functions as the controller of output buffers.dqm is also used for device selection,byte selection and bus control in a memory system. 20 integrated silicon solution, inc. ? 1-800-379-4774 rev. b 05/24/06 issi ? is42s32800b absolute maximum ratings (1) dc recommended operating conditions symbol parameter min. typ. max. unit v dd supply voltage 3.0 3.3 3.6 v v ddq supply voltage for dq 3.0 3.3 3.6 v v ih high level input voltage (all inputs) 2.0 ? v dd + 1.2 v v il low level input voltage (all inputs) -1.2 ? +0.8 v notes: 1. all voltages are referenced to v ss =0v 2. v ih (max) for pulse width with 3ns of duration 3. v il (min) for pulse width with 3ns of duration capacitance characteristics (at t a = 0 ~ 70c, v dd = v ddq = 3.3 0.3v, v ss = v ssq = 0v , unless otherwise note d ) symbol parameter min. max. unit c in input capacitance, address & control pin 1.5 3.0 pf c clk i nput capacitance, clk pin 1.5 3.0 pf c i / o data input/output capacitance 3.0 5.5 pf s y m b o l p a r a m e t e r s r a t i n g u n i t v d d s u p p l y v o l t a g e ( w i t h r e s p e c t t o v s s ) ? 0 . 5 t o + 4 . 6 v v d d q s u p p l y v o l t a g e f o r o u t p u t ( w i t h r e s p e c t t o v s s q ) ? 0 . 5 t o + 4 . 6 v v i i n p u t v o l t a g e ( w i t h r e s p e c t t o v s s ) ? 0 . 5 t o v d d + 0 . 5 v v o o u t p u t v o l t a g e ( w i t h r e s p e c t t o v s s q ) ? 1 . 0 t o v d d q + 0 . 5 v i o s h o r t c i r c u i t o u t p u t c u r r e n t 5 0 m a p d p o w e r d i s s i p a t i o n ( t a = 2 5 c ) 1 w t o p t o p e r a t i n g t e m p e r a t u r e c o m . 0 t o + 7 0 c i n d . - 4 0 t o + 8 5 t s t g s t o r a g e t e m p e r a t u r e ? 6 5 t o + 1 5 0 c n o t e s : 1 . e x p o s i n g t h e d e v i c e t o s t r e s s a b o v e t h o s e l i s t e d i n a b s o l u t e m a x i m u m r a t i n g s c o u l d c a u s e p e r m a n e n t d a m a g e . t h e d e v i c e i s n o t m e a n t t o b e o p e r a t e d u n d e r c o n d i t i o n s o u t s i d e t h e l i m i t s d e s c r i b e d i n t h e o p e r a t i o n a l s e c t i o n o f t h i s s p e c i f i c a t i o n . e x p o s u r e t o a b s o l u t e m a x i m u m r a t i n g c o n d i t i o n s f o r e x t e n d e d p e r i o d s m a y a f f e c t d e v i c e r e l i a b i l i t y . integrated silicon solution, inc. ? 1-800-379-4774 21 rev. b 05/24/06 issi ? is42s32800b - 6/7 description/test condition symbol max. unit note operating current t rc t rc (min), outputs open, input signal one transition per one cycle 1 bank operation i cc1 135/125 3 precharge standby current in power down mode t ck = 15ns, cke v il (max) i cc2p 3 precharge standby current in power down mode t ck = , cke v il (max) i cc2ps 2 precharge standby current in non-power down mode t ck = 15ns, cs# v ih (min), cke v ih input signals are changed once during 30ns. i cc2n 20 3 precharge standby current in non-power down mode t ck = , clk v il (max), cke v ih i cc2ns 9 active standby current in power down mode cke v il (max), t ck = 15ns i cc3p 4m a3 active standby current in power down mode cke& clk v il (max), t ck = i cc3ps 3 active standby current in non-power down mode cke v ih (min), cs# v ih (min), t ck = 15ns i cc3n 45 active standby current in non-power down mode cke v ih (min), clk v il (max), t ck = i cc3ns 30 operating current (burst mode) t ck =t ck (min), outputs open, multi-bank interleave i cc4 180/150 3, 4 refresh current t rc t rc (min) i cc5 300/270 3 self refresh current cke 0.2v i cc6 1 (l-version) 3 parameter description min. max. unit note i il input leakage current (0v v in v dd , all other pins not under test = 0v ) - 1 + 1 a i ol 2.4 v v oh lvttl output "h" level voltage ( i out = -2ma ) 3 3 v ol lvttl output "l" level voltage ( i out = 2ma ) 0.4 v output leakage current (0v v out v dd , dq disable ) - 1.5 + 1.5 a d.c. electrical characteristics (recommended operating conditions) 22 integrated silicon solution, inc. ? 1-800-379-4774 rev. b 05/24/06 issi ? is42s32800b - 6/7 symbol a.c. parameter min. max. unit note t rc row cycle time (same bank) 60/70 9 t rrd row activate to row activate delay (different banks) 12/14 9 t rcd ras# to cas# delay (same bank) 18/20 9 t rp precharge to refresh/row activate command (same bank) 18/20 9 t ras row activate to precharge time (same bank) 42/45 120,000 9 t ck2 clock cycle time cl* = 2 7.5/10 t ck3 cl* = 3 6/7 ns access time from clk 9 t ac (positive edge) 5.5/5.5 t oh data output hold time 2/2 9 t ch clock high time 2.5/2.5 10 t cl clock low time 2.5/2.5 10 t is data/address/control input set-up time 2.0/2.0 10 t ih data/address/control input hold time 1 10 t lz data output low impedance 1 9 t hz data output high impedance 5.4 8 t wr write recovery time 2 t ccd cas# to cas# delay time 1 clk t mrs mode register set cycle time 2 * cl is cas# latency. e ac electrical characteristics (recommended operating conditions) 5,6,7,8 note: 1. stress greater than those listed under ?absolute maximum ratings?may cause permanent damage to the device. 2. all voltages are referenced to vss. 3. these parameters depend on the cycle rate and these values are measured by the cycle rate under the minimum value of tck and trc.input signals are changed one time during tck. 4. these parameters depend on the output loading.specified values are obtained with the output open. 5. power-up sequence is described in note 11. integrated silicon solution, inc. ? 1-800-379-4774 23 rev. b 05/24/06 issi ? is42s32800b (n otes continued) 6. a.c. test conditions lvttl interface reference level of output signals 1.4v /1.4v output load reference to the under output load input signal levels 2.4v /0.4v transition time (rise and fall)of input signals 1ns reference level of input signals 1.4v 1.4v 50? output 30pf z0= 50? lvttl a.c. test load 7. transition times are measured between vih and vil.transition(rise and fall)of input signals are in a fixed slope (1 ns). 8. t hz defines the time in which the outputs achieve the open circuit condition and are not at reference levels. 9. if clock rising time is longer than 1 ns,(t r /2 -0.5)ns should be added to the parameter. 10. assumed input rise and fall time t t (t r &t f )=1 ns if t r or t f is longer than 1 ns,transient time compensation should be considered,i.e.,[(tr +tf)/2 -1 ]ns should be added to the parameter. 11. power up sequence power up must be performed in the following sequence. 1) power must be applied to v dd and v ddq (simultaneously)when all input signals are held ?nop?state and both cke =?h?and dqm =?h.?the clk signals must be started at the same time. 2) after power-up,a pause of 200 seconds minimum is required.then,it is recom mended that dqm is held ?high?(v dd levels)to ensure dq output is in high impedance. 3) all banks must be precharged. 4) mode register set command must be asserted to initialize the mode register. 5) a minimum of 2 auto-refresh dummy cycles must be required to stabilize the internal circuitry of the device. 24 integrated silicon solution, inc. ? 1-800-379-4774 rev. b 05/24/06 issi ? is42s32800b timing waveforms figure 1.ac parameters for write timing (burst length=4,cas#latency=2) -5 , , -7 , x x bs0,1 t ch t cl t ck2 t is t is t ih begin auto precharge bank a begin auto precharge bank b t is t ih t is rbx cax rbx cbx ray cay raz rby t rcd t dal t rc t is t ih t wr t rp t rrd ax0 ax1 ax2 ax3 bx0 bx1 bx2 bx3 ay 0 ay 1 ay 2 ay 3 activate command bank a write with auto precharge command bank a activate command bank b write with auto precharge command bank b activate command bank a write command bank a precharge command bank a activate command bank a activate command bank b clk cke cs# ras# cas# we# a ddr. dqm dq hi-z t0 t2 t1 t3 t4 t5 t6 t7 t9 t8 t12 t11 t10 t14 t13 t15 t16 t17 t18 t19 t21 t20 t22 integrated silicon solution, inc. ? 1-800-379-4774 25 rev. b 05/24/06 issi ? is42s32800b figure 2.ac parameters for read timing (burst length=2,cas#latency=2) a10 a0-a9 dq t ch t cl t ck2 t is t is t ih begin auto precharge bank b t ih t ih t is rax rax cax rbx rbx cbx ray ray t rrd t ras t rc t rcd t ac2 t lz t oh t hz ax0 ax1 bx0 bx1 t rp activate command bank a rea d command bank a activate command bank b read with auto precharge command bank b precharge command bank a activate command bank a hi-z t ac2 t hz t0 t2 t1 t3 t4 t5 t6 t7 t9 t8 t12 t11 t10 t13 bs0,1 clk cke cs# ras# cas# we# dqm 26 integrated silicon solution, inc. ? 1-800-379-4774 rev. b 05/24/06 issi ? is42s32800b a10 a 0-a9 dqm dq t ck2 rax rax cax t rp t rc ax0 ax1 ax2 ax3 precharge all command auto refresh command auto refresh command activate command bank a read command bank a t rc t0 t2 t1 t3 t4 t5 t6 t7 t9 t8 t12 t11 t10 t14 t13 t15 t16 t17 t18 t19 t21 t20 t22 bs0,1 clk cke cs# ras# cas# we# dq figure 3.auto refresh (cbr)(burst length=4,cas#latency=2) integrated silicon solution, inc. ? 1-800-379-4774 27 rev. b 05/24/06 issi ? is42s32800b figure 4.power on sequene and auto refresh (cbr) t0 t1 t2 t3 t4 t5 t6 t7 t8 t9 t10 t11 t12 t13 t14 t15 t16 t17 t18 t19 t20 t21 t22 clk cke cs ras cas we a10 add d qm dq high level is required minimum of 2 refresh cycles are required t mrs t rp high level is necessary t rc address key inputs be stable for 200us precharge all banks must command 1st auto command refresh 2nd auto refresh command mode set command command register hi-z b s0, 1 28 integrated silicon solution, inc. ? 1-800-379-4774 rev. b 05/24/06 issi ? is42s32800b figure 5.self refresh entry &exit cycle note:to enter selfrefresh mode 1. cs#,ras#&cas#with cke should be low at the same clock cycle. 2. after 1 clock cycle,all the inputs including the system clock can be don ?t care except for cke. 3. the device remains in selfrefresh mode as long as cke stays ?low?. once the device enters selfrefresh mode,minimum tras is required before exit from selfrefresh. to exit selfrefresh mode 1. system clock restart and be stable before returning cke high. 2. enable cke and cke should be set high for minimum time of tsrx. 3. cs#starts from high. 4. minimum trc is required after cke going high to complete selfrefresh exit. 5. 2048 cycles of burst autorefresh is required before selfrefresh entry and after selfrefresh exit if the system uses burst ref resh. clk cke cs# ras# cas# bs0,1 a 0-a9 we# dqm dq *note 1 *note 2 t is *note 3 *note 4 t rc(min) *note 7 *note 5 *note 6 *note 8 *note 8 hi-z hi-z selfrefresh enter selfrefresh exit auto refresh t srx t pde t0 t2 t1 t3 t4 t5 t6 t7 t9 t8 t12 t11 t10 t14 t13 t15 t16 t17 t18 t19 integrated silicon solution, inc. ? 1-800-379-4774 29 rev. b 05/24/06 issi ? is42s32800b figure 6.2.clock suspension during burst read (using cke) (burst length=4,cas#latency=2) t 0 t 1 t 2 t 3 t 4 t 5 t 6 t 7 t 8 t 9 t10 t 11 t12 t13 t14 t15 t16 t17 t18 t19 t20 t21 t2 2 t ck2 rax rax cax hi-z ax0 ax1 ax2 ax3 activate command bank a rea d command bank a clock suspend 1 cycle t hz clk cke cs# ras# cas# we# bs0,1 a10 a0-a9 dqm dq clock suspend 2 cycle clock suspend 3 cycle note: cke to clk disable/enable =1 clock 30 integrated silicon solution, inc. ? 1-800-379-4774 rev. b 05/24/06 issi ? is42s32800b figure 6.3.clock suspension during burst read (using cke) (burst length=4,cas#latency=3) note: cke to clk disable/enable =1 clock t0t 1 t3t4t5t6t7t8t9t10t 11 t12 t13 t14 t15 t16 t17 t18 t19 t20 t21 t2 2 t ck3 rax rax cax hi-z ax0 ax1 ax2 ax3 t hz t 2 clock suspend 1 cycle clock suspend 2 cycle clock suspend 3 cycle activate command bank a rea d command bank a clk cke cs# ras# cas# we# bs0,1 a10 a0-a9 dqm dq hi-z integrated silicon solution, inc. ? 1-800-379-4774 31 rev. b 05/24/06 issi ? is42s32800b t0t 1t2t3t4t5t6t7t8t9t10t 11t12t13t14t15t16t17t18t19t20t21 t2 2 t ck2 rax rax cax dax0 dax1 dax2 dax3 clk cke cs# ras# cas# we# bs0,1 a10 a0-a9 dqm dq hi-z activate command bank a write command bank a clock suspend 1 cycle clock suspend 2 cycle clock suspend 3 cycle figure 7.2.clock suspension during burst write (using cke) (burst length=4,cas#latency=2) note: cke to clk disable/enable =1 clock 32 integrated silicon solution, inc. ? 1-800-379-4774 rev. b 05/24/06 issi ? is42s32800b figure 7.3.clock suspension during burst write (using cke) (burst length=4,cas#latency=3) note: cke to clk disable/enable =1 clock t 0 t 1 t 2 t 3 t 4 t 5 t 6 t 7 t 8 t 9 t10 t 11 t12 t13 t14 t15 t16 t17 t18 t19 t20 t21 t2 2 dax0 dax1 dax2 dax 3 t ck3 rax rax cax clk cke cs# ras# cas# we# bs0,1 a10 a0-a9 dqm dq hi-z activate command bank a clock suspend 1 cycle clock suspend 2 cycle clock suspend 3 cycle write command bank a integrated silicon solution, inc. ? 1-800-379-4774 33 rev. b 05/24/06 issi ? is42s32800b t0t 1t2t3t4t5t6t7t8t9t10t 11t12t13t14t15t16t17t18t19t20t21t2 2 t ck2 t is t pde rax rax cax t hz ax3 ax2 ax1 ax0 power down mode entry power down mode entry mode exit clock mask start standby any valid active standby clk cke cs# ras# cas# we# bs0,1 a10 a0-a9 dqm dq hi-z activate command bank a rea d command bank a power down mode exit power down clock mask end precharge command bank a precharge command figure 8.power down mode and clock mask (burst lenght=4, cas#latency=2) 34 integrated silicon solution, inc. ? 1-800-379-4774 rev. b 05/24/06 issi ? is42s32800b figure 9.2.random column read (page within same bank) (burst length=4,cas#latency=2) t0t 1t2t3t4t5t6t7t8t9t10t 11t12t13t14t15t16t17t18t19t20t21t22 t ck2 aw0 aw1 aw2 aw3 ax0 ax1 ay0 ay1 ay2 ay3 raw raw caw cax cay caz az0 az1 az2 az3 activate raz raz clk cke cs# ras# cas# we# ba0,1 a10 a0-a9 dqm dq hi-z activate command bank a rea d command bank a precharge command bank a rea d command bank a command bank a rea d command bank a rea d command bank a integrated silicon solution, inc. ? 1-800-379-4774 35 rev. b 05/24/06 issi ? is42s32800b figure 9.3.random column read (page within same bank) (burst length=4,cas#latency=3) t0t 1t2t3t4t5t6t7t8t9t10t 11 t12 t13 t14 t15 t16 t17 t18 t19 t20 t21 t2 2 t ck3 aw0 aw1 aw2 aw3 ax0 ax1 ay0 ay1 ay2 ay3 raw raw caw cax cay caz raz raz az0 clk cke cs# ras# cas# we# bs0,1 a10 a0-a9 dqm dq hi-z activate command bank a activate command bank a rea d command bank a rea d command bank a rea d command bank a rea d command bank a precharge command bank a 36 integrated silicon solution, inc. ? 1-800-379-4774 rev. b 05/24/06 issi ? is42s32800b figure 10.2.random column write (page within same bank) (burst length=4,cas#latency=2) t0t 1t2t3t4t5t6t7t8t9t10t 11t12t13t14t15t16t17t18t19t20t21t2 2 t ck2 dbw0 dbx0 dbx1 dby0 rbw cbw cbx cb y cb z rbz rb z rbw dbw1 dbw2 dbw3 dby1 dby2 dby3 dbz0 dbz1 dbz2 dbz3 clk cke cs# ras# cas# we# bs0,1 a10 a0-a9 dqm dq hi-z write command bank a write command bank b write command bank b write command bank b activate command bank a activate command bank b precharge command bank b integrated silicon solution, inc. ? 1-800-379-4774 37 rev. b 05/24/06 issi ? is42s32800b figure 10.3.random column write (page within same bank) (burst length=4,cas#latency=3) t0t 1t2t3t4t5t6t7t8t9t10t 11t12t13t14t15t16t17t18t19t20t21t2 2 t ck3 dbw0 dbx0 dbx1 rbw cbw cbx cby cbz dbz0 rbz rbz rbw dbz1 dbz2 dbw1 dbw2 dbw3 dby0 dby1 dby2 dby3 clk cke cs# ras# cas# we# bs0,1 a10 a 0-a9 dqm dq hi-z write command bank a write command bank b write command bank b write command bank b activate command bank a activate command bank b precharge command bank b 38 integrated silicon solution, inc. ? 1-800-379-4774 rev. b 05/24/06 issi ? is42s32800b figure 11.3.random row read (interleaving banks) (burst length=8,cas#latency=3) t0t 1t2t3t4t5t6t7t8t9t10t 11t12t13t14t15t16t17t18t19t20t21t2 2 t ck3 bx0 bx1 bx2 bx3 bx4 bx5 bx6 bx7 ax0 ax1 rbx rbx rby cby high rax ax7 by0 ax2 ax3 ax4 ax5 ax6 cbx cax rax rby t rcd t ac3 t rp clk cke cs# ras# cas# we# bs0,1 a10 a0-a9 dqm dq hi-z activate command bank a rea d command bank a precharge command bank a activate command bank b activate command bank b rea d command bank b rea d command bank b precharge command bank b 39 integrated silicon solution, inc. ? 1-800-379-4774 rev. b 05/24/06 issi ? is42s32800b t0 t 1 t2 t3 t4 t5 t6 t7 t8 t9 t10 t 11 t12 t13 t14 t15 t16 t17 t18 t19 t20 t21 t2 2 t ck2 dax0 dax1 dax2 dax3 dax4 dax5 dax6 dax7 dbx0 dbx1 rax rax ray cay rbx dbx7 dbx2 dbx3 dbx4 dbx5 dbx6 cax cbx rbx ray t rcd day3 day0 day1 day2 day4 t wr* t rp t wr* * t wr > t wr (min.) clk cke cs# ras# cas# we# bs0,1 a10 a0-a9 dqm dq hi-z write command bank a write command bank a activate command bank a activate command bank a precharge command bank a write command bank b activate command bank b precharge command bank b high figure 12.2.random row write (interleaving banks) (burst length=8,cas#latency=2) integrated silicon solution, inc. ? 1-800-379-4774 40 rev. b 05/24/06 issi ? is42s32800b figure 12.3.random row write (interleaving banks) (burst length=8,cas#latency=3) t0t 1t2t3t4t5t6t7t8t9t10t 11t12t13t14t15t16t17t18t19t20t21t2 2 t ck3 dax0 dax1 dax2 dax3 dax4 dax5 dax6 dax7 dbx0 dbx1 rax rax ray cay rbx dbx7 dbx2 dbx3 dbx4 dbx5 dbx6 cax cbx rbx ray t rcd day3 day0 day1 day2 t wr* t rp t wr* * t wr > t wr (min.) clk cke cs# ras# cas# we# bs0,1 a10 a0-a9 dqm dq hi-z write command bank a write command bank a activate command bank a activate command bank a precharge command bank a write command bank b activate command bank b precharge command bank b high 41 integrated silicon solution, inc. ? 1-800-379-4774 rev. b 05/24/06 issi ? is42s32800b t0t 1t2t3t4t5t6t7t8t9t10t 11t12t13t14t15t16t17t18t19t20t21t2 2 t ck2 ax0 ax1 ax2 ax3 day0 day1 az3 day3 az0 az1 rax rax cax cay caz clk cke cs# ras# cas# we# bs0,1 a10 a0-a9 dqm dq hi-z write command bank a activate command bank a rea d command bank a rea d command bank a the write data is masked with a zero clock latency the read data is masked with a two clock latency figure 13.2.read and write cycle (burst length=4,cas#latency=2) integrated silicon solution, inc. ? 1-800-379-4774 42 rev. b 05/24/06 issi ? is42s32800b figure 13.3.read and write cycle (burst length=4,cas#latency=3) t0 t 1 t2 t3 t4 t5 t6 t7 t8 t9 t10 t 11 t12 t13 t14 t15 t16 t17 t18 t19 t20 t21 t2 2 t ck3 ax0 ax1 ax2 ax3 day0 day1 az3 day3 az0 az1 rax rax cax cay caz clk cke cs# ras# cas# we# bs0,1 a10 a 0-a9 dqm dq hi-z write command bank a activate command bank a rea d command bank a rea d command bank a the write data is masked with a zero clock latency the read data is masked with a two clock latency 43 integrated silicon solution, inc. ? 1-800-379-4774 rev. b 05/24/06 issi ? is42s32800b t0 t 1 t2 t3 t4 t5 t6 t7 t8 t9 t10 t 11 t12 t13 t14 t15 t16 t17 t18 t19 t20 t21 t2 2 t ck2 bw0 bw1 bx0 bx1 by1 ay0 bz0 rax rax ax0 ax1 ax2 ax3 by0 ay1 bz1 bz2 bz3 t rcd t ac2 cay rax rax cbw cbx cby cay cbz clk cke cs# ras# cas# we# bs0,1 a10 a 0-a9 dqm dq hi-z activate command bank a rea d command bank a rea d command bank a precharge command bank a activate command bank b rea d command bank b rea d command bank b rea d command bank b rea d command bank b precharge command bank b figure 14.2.interleaving column read cycle (burst length=4,cas#latency=2) integrated silicon solution, inc. ? 1-800-379-4774 44 rev. b 05/24/06 issi ? is42s32800b t0 t 1 t2 t3 t4 t5 t6 t7 t8 t9 t10 t 11 t12 t13 t14 t15 t16 t17 t18 t19 t20 t21 t2 2 t ck3 bx0 bx1 by0 by1 bz1 a y0 ay 2 rax rax ax0 ax1 ax2 ax3 bz0 ay1 ay 3 t rcd t ac3 cax rbx rbx cbx cby cbz cay clk cke cs# ras# cas# we# bs0,1 a10 a0-a9 dqm dq hi-z activate command bank a rea d command bank a rea d command bank a precharge command bank a activate command bank b rea d command bank b rea d command bank b rea d command bank b precharge command bank b figure 14.3.interleaved column read cycle (burst length=4,cas#latency=3) 45 integrated silicon solution, inc. ? 1-800-379-4774 rev. b 05/24/06 issi ? is42s32800b t0 t 1 t2 t3 t4 t5 t6 t7 t8 t9 t10 t 11 t12 t13 t14 t15 t16 t17 t18 t19 t20 t21 t22 t ck2 dbx0 dbx1 day0 rax rax dax0 dax1 dax2 dax3 day1 t rcd cax rbw rbw cbw cbx cby cay t rrd t rp t wr t rp cbz dbz0 dbz1 dbz2 dbz3 dby0 dby1 dbw0 dbw1 clk cke cs# ras# cas# we# bs0,1 a10 a 0-a9 dqm dq hi-z write command bank a write command bank a activate command bank a precharge command bank a write command bank b write command bank b write command bank b write command bank b activate command bank b precharge command bank b figure 15.2.interleaved column write cycle (burst length=4,cas#latency=2) integrated silicon solution, inc. ? 1-800-379-4774 46 rev. b 05/24/06 issi ? is42s32800b figure 15.3.interleaved column write cycle (burst length=4,cas#latency=3) t 0 t 1 t 2 t 3 t 4 t 5 t 6 t 7 t 8 t 9 t10 t 11 t12 t13 t14 t15 t16 t17 t18 t19 t20 t21 t22 t ck3 dbw0 dbw1 dbx0 dbx1 dby1 day0 rax rax dax0 dax1 dax2 dax3 dby0 day1 t rcd cax rbw rbw cbw cbx cby cay t rrd > t rrd(min) t rp t wr t wr(min) cbz dbz0 dbz1 dbz2 dbz3 clk cke cs# ras# cas# we# bs0,1 a10 a 0-a9 dqm dq hi-z write command bank a write command bank a activate command bank a precharge command bank a write command bank b write command bank b write command bank b write command bank b activate command bank b precharge command bank b 47 integrated silicon solution, inc. ? 1-800-379-4774 rev. b 05/24/06 issi ? is42s32800b figure 16.2.auto precharge after read burst (burst length=4,cas#latency=2) t0 t 1 t2 t3 t4 t5 t6 t7 t8 t9 t10 t 11 t12 t13 t14 t15 t16 t17 t18 t19 t20 t21 t2 2 t ck2 bx0 bx1 bx2 bx3 ay1 ay2 rax rax rbx ax0 ax1 ax2 ax3 ay0 ay3 by0 rbx cbx rby ray cby by1 by2 by3 az0 az1 az2 cax rby raz caz raz clk cke cs# ras# cas# we# bs0,1 a10 a 0-a9 dqm dq hi-z activate command bank a activate command bank a rea d command bank a activate command bank b activate command bank b high read with auto precharge command bank b read with auto precharge command bank b read with auto precharge command bank a read with auto precharge command bank a integrated silicon solution, inc. ? 1-800-379-4774 48 rev. b 05/24/06 issi ? is42s32800b figure 16.3.auto precharge after read burst (burst length=4,cas#latency=3) t0 t 1 t2 t3 t4 t5 t6 t7 t8 t9 t10 t 11 t12 t13 t14 t15 t16 t17 t18 t19 t20 t21 t22 t ck3 bx0 bx1 bx2 bx3 ay1 ay2 rax rax rbx ax0 ax1 ax2 ax3 ay0 ay3 by0 rbx cbx by1 by2 by3 cax rby cby rby ca y clk cke cs# ras# cas# we# bs0,1 a10 a 0-a9 dqm dq hi-z activate command bank a rea d command bank a activate command bank b activate command bank b high read with auto precharge command bank b read with auto precharge command bank b read with auto precharge command bank a 49 integrated silicon solution, inc. ? 1-800-379-4774 rev. b 05/24/06 issi ? is42s32800b figure 17.2.auto precharge after write burst (burst length=4,cas#latency=2) t0t 1t2t3t4t5t6t7t8t9t10t 11t12t13t14t15t16t17t18t19t20t21t22 t ck2 dbx0 dbx1 dbx2 dbx3 day1 day2 rax rax rbx dax0 dax1 dax2 dax3 day0 day3 cbx cay rby cby rby daz0 daz1 daz2 daz3 cax rbx caz raz raz dby0 dby1 dby2 dby3 clk cke cs# ras# cas# we# bs0,1 a10 a 0-a9 dqm dq hi-z write command bank a activate command bank a activate command bank a activate command bank b activate command bank b high write with auto precharge command bank b write with auto precharge command bank b write with auto precharge command bank a write with auto precharge command bank a integrated silicon solution, inc. ? 1-800-379-4774 50 rev. b 05/24/06 issi ? is42s32800b figure 17.3.auto precharge after write burst (burst length=4,cas#latency=3) t0 t 1 t2 t3 t4 t5 t6 t7 t8 t9 t10 t 11 t12 t13 t14 t15 t16 t17 t18 t19 t20 t21 t2 2 t ck3 dbx0 dbx1 dbx2 dbx3 day1 day2 rax rax rbx dax0 dax1 dax2 dax3 day0 day3 cbx cay cax rbx cby rby rby ? dby0 dby1 dby2 dby3 clk cke cs# ras# cas# we# bs0,1 a9 a0-a9 dqm dq hi-z write command bank a activate command bank a activate command bank b activate command bank b high write with auto precharge command bank b write with auto precharge command bank b write with auto precharge command bank a 51 integrated silicon solution, inc. ? 1-800-379-4774 rev. b 05/24/06 issi ? is42s32800b figure 18.2.full page read cycle (burst length=full page,cas#latency=2) t0 t 1t2t3t4t5t6t7t8t9t10t 11 t12 t13 t14 t15 t16 t17 t18 t19 t20 t21 t22 ax ax+1 bx bx+1 bx+3 bx+4 rax rax ax+1 ax+2 ax-2 ax- 1 b x+2 bx+5 cbx rbx cax rby rby ax bx+6 t ck2 t rp rbx clk cke cs# ras# cas# we# bs0,1 a10 a0-a9 dqm dq hi-z activate command bank a activate command bank b activate command bank b precharge command bank b high burst stop command the burst counter wraps from the highest order page address back to zero during this time interval rea d command bank a rea d command bank b full page burst operation does not term in ate when the burst length is sat is fied; the burst counter incre ments and continues bursting beginning with the starting address. integrated silicon solution, inc. ? 1-800-379-4774 52 rev. b 05/24/06 issi ? is42s32800b figure 18.3.full page read cycle (burst length=full page,cas#latency=3) t0t 1t2t3t4t5t6t7t8t9t10t 11t12t13t14t15t16t17t18t19t20t21t2 2 bx bx+1 rax rax ax+1 ax-2 ax-1 cbx rbx cax rby rby ax t ck3 t rp rbx ax+2 ax ax+1 bx+2 bx+3 bx+4 bx+5 clk cke cs# ras# cas# we# bs0,1 a10 a0-a9 dqm dq hi-z activate command bank a activate command bank b activate command bank b precharge command bank b high burst stop command the burst counter wraps from the highest order page address back to zero during this time interval rea d command bank a rea d command bank b full page burst operation does not terminate when the burst length is satisfied; the burst counter increments and continues bursting beginning with the starting address. 53 integrated silicon solution, inc. ? 1-800-379-4774 rev. b 05/24/06 issi ? is42s32800b figure 19.2.full page write cycle (burst length=full page,cas#latency=2) t0 t 1 t2 t3 t4 t5 t6 t7 t8 t9 t10 t 11 t12 t13 t14 t15 t16 t17 t18 t19 t20 t21 t2 2 rax rax cbx rbx cax rby rby t ck2 5 rbx dax dax+1 dax+2 dax+3 dax-1 dax dax+1 dbx dbx+1 dbx+2 dbx+3 dbx+4 dbx+5 dbx+6 clk cke cs# ras# cas# we# bs0,1 a10 a0-a9 dqm dq hi-z write command bank a activate command bank a write command bank b activate command bank b activate command bank b precharge command bank b high burst stop command data is ignored full page burst operation does not terminate when the burst length is satisfied; the burst counter increments and continues bursting beginning with the starting address. the burst counter wraps from the highest order page address back to zero during this time interval integrated silicon solution, inc. ? 1-800-379-4774 54 rev. b 05/24/06 issi ? is42s32800b figure 19.3.full page write cycle (burst length=full page,cas#latency=3) t0t 1t2t3t4t5t6t7t8t9t10t 11t12t13t14t15t16t17t18t19t20t21t2 2 rax rax cbx rbx cax rby rby t ck3 rbx data is ignor ed dax dax+1 dax+2 dax+3 dax-1 dax dax+1 dbx dbx+1 dbx+3 dbx+4 dbx+5 clk cke cs# ras# cas# we# bs0,1 a10 a0-a9 dqm dq hi-z high write command bank a activate command bank a write command bank b activate command bank b the burst counter wraps from the highes t order page address back to zero during this time interval activate command bank b precharge command bank b burst stop command full page burst operation does not terminate when the burst length is satisfied; the burst counter increments and continues bursting beginning with the starting address. 55 integrated silicon solution, inc. ? 1-800-379-4774 rev. b 05/24/06 issi ? is42s32800b figure 20.byte write operation (burst length=4,cas#latency=2) t0t 1t2t3t4t5t6t7t8t9t10t 11t12t13t14t15t16t17t18t19t20t21t22 rax rax cay cax t ck2 caz ax0 ax1 ax2 ax1 ax2 ax3 day1 day2 day0 day1 day3 az1 az2 az1 az2 az3 write command bank a clk cke cs# ras# cas# we# bs0,1 a10 a0-a9 high activate command bank a command bank a dqm0 dqm1,2,3 dq0 - dq7 dq8 - dq15 rea d command bank a rea d are masked upper 3 bytes are masked upper 3 bytes lower byte is masked lower byte is masked lower byte is masked integrated silicon solution, inc. ? 1-800-379-4774 56 rev. b 05/24/06 issi ? is42s32800b figure 22.full page random column read (burst length=full page,cas#latency=2) t0 t 1 t2 t3 t4 t5 t6 t7 t8 t9 t10 t 11 t12 t13 t14 t15 t16 t17 t18 t19 t20 t21 t2 2 t ck2 ax0 bx0 ay0 ay1 by0 by1 az0 az1 az2 bz0 bz1 bz2 t rp t rrd t rcd rax rax rbx rbx cax cbx cay cby caz cbz rbw rbw clk cke cs# ras# cas# we# bs0,1 a10 a0-a9 dqm dq command bank b activate command bank a activate command bank b activate command bank b rea d command bank b rea d command bank b rea d command bank a rea d command bank a rea d command bank a rea d precharge command bank b (precharge temination) 57 integrated silicon solution, inc. ? 1-800-379-4774 rev. b 05/24/06 issi ? is42s32800b figure 23.full page random column write (burst length=full page,cas#latency=2) t0t 1t2t3t4t5t6t7t8t9t10t 11t12t13t14t15t16t17t18t19t20t21t2 2 t ck2 dax0 dbx0 day0 day1 dby0 dby1 daz0 daz1 daz2 dbz0 t rp t rrd t rcd rax rax rbx rbx cax cbx cay cby caz cbz rbw rbw t wr dbz1 dbz2 clk cke cs# ras# cas# we# bs0,1 a10 a0-a9 dqm dq write command bank a write command bank a write command bank a activate command bank a write command bank b write command bank b write command bank b activate command bank b activate command bank b precharge command bank b (precharge temination) write data is masked integrated silicon solution, inc. ? 1-800-379-4774 58 rev. b 05/24/06 issi ? is42s32800b figure 24.2.precharge termination of a burst (burst length=8 or full page,cas#latency=2) t0 t 1 t2 t3 t4 t5 t6 t7 t8 t9 t10 t 11 t12 t13 t14 t15 t16 t17 t18 t19 t20 t21 t2 2 t ck2 dax0 dax1 dax2 dax3 ay2 ay0 ay1 rax rax ray cax ray cay az0 az1 az2 t wr t rp t rp raz caz t rp raz clk cke cs# ras# cas# we# bs0,1 a10 a0-a9 dqm dq high write command bank a activate command bank a activate command bank a activate command bank a command bank a precharge command bank a precharge command bank a precharge command bank a read command bank a read precharge termination of a write burst. precharge termination of a read burst. write data is masked. 59 integrated silicon solution, inc. ? 1-800-379-4774 rev. b 05/24/06 issi ? is42s32800b figure 24.3.precharge termination of a burst (burst length=4,8 or full page,cas#latency=3) t0t 1t2t3t4t5t6t7t8t9t10t 11t12t13t14t15t16t17t18t19t20t21t2 2 t ck3 dax0 ay0 ay1 ay2 rax rax ray cax ray cay t wr t rp t rp raz raz dax1 clk cke cs# ras# cas# we# bs0,1 a10 a0-a9 dqm dq high write command bank a command bank a activate command bank a activate command bank a activate command bank a precharge command bank a precharge command bank a write data is masked precharge termination of a write burst precharge termination of a read burst read integrated silicon solution, inc. ? 1-800-379-4774 60 rev. b 05/24/06 issi ? is42s32800b ordering information commercial range: 0c to +70c frequency speed (ns) order part no. package 166 mhz 6 is42s32800b-6t 400 mil tsop-ii 166 mhz 6 is42s32800b-6tl 400 mil tsop-ii, lead-free 166 mhz 6 i s42s32800b-6b 8 x13mm bga 166 mhz 6 IS42S32800B-6BL 8 x13mm bga, lead-free 143 mhz 7 is42s32800b-7t 400 mil tsop-ii 143 mhz 7 is42s32800b-7tl 400 mil tsop-ii, lead-free 143 mhz 7 i s42s32800b-7b 8 x13mm bga 143 mhz 7 is42s32800b-7bl 8 x13mm bga, lead-free industrial range: -40c to +85c frequency speed (ns) order part no. package 166 mhz 6 is42s32800b-6ti 400 mil tsop-ii 166 mhz 6 is42s32800b-6tli 400 mil tsop-ii, lead-free 166 mhz 6 is42s 32800b-6bi 8 x13mm bga 166 mhz 6 IS42S32800B-6BLi 8 x13mm bga, lead-free 143 mhz 7 is42s32800b-7ti 400 mil tsop-ii 143 mhz 7 is42s32800b-7tli 400 mil tsop-ii, lead-free 143 mhz 7 is42s 32800b-7bi 8 x13mm bga 143 mhz 7 is42s32800b-7bli 8 x13mm bga, lead-free packaging information issi ? integrated silicon solution, inc. ? 1-800-379-4774 1 rev. c 01/28/02 plastic tsop 54?pin, 86-pin package code: t (type ii) plastic tsop (t - type ii) millimeters inches symbol min max min max ref. std. no. leads (n) 54 a ? 1.20 ? 0.047 a1 0.05 0.15 0.002 0.006 a2 ? ? ? ? b 0.30 0.45 0.012 0.018 c 0.12 0.21 0.005 0.0083 d 22.02 22.42 0.867 0.8827 e1 10.03 10.29 0.395 0.405 e 11.56 11.96 0.455 0.471 e 0.80 bsc 0.031 bsc l 0.40 0.60 0.016 0.024 l1 ? ? ? ? zd 0.71 ref 0 8 0 8 d seating plane b e c 1 n/2 n/2+1 n e1 a1 a e l zd notes: 1. controlling dimension: millimieters, unless otherwise specified. 2. bsc = basic lead spacing between centers. 3. dimensions d and e1 do not include mold flash protrusions and should be measured from the bottom of the package . 4. formed leads shall be planar with respect to one another within 0.004 inches at the seating plane. plastic tsop (t - type ii) millimeters inches symbol min max min max ref. std. no. leads (n) 86 a ? 1.20 ? 0.047 a1 0.05 0.15 0.002 0.006 a2 0.95 1.05 0.037 0.041 b 0.17 0.27 0.007 0.011 c 0.12 0.21 0.005 0.008 d 22.02 22.42 0.867 0.8827 e1 10.16 bsc 0.400 bsc e 11.56 11.96 0.455 0.471 e 0.50 bsc 0.020 bsc l 0.40 0.60 0.016 0.024 l1 0.80 ref 0.031 ref zd 0.61 ref 0.024 bsc 0 8 0 8 packaging information issi ? integrated silicon solution, inc. ? www.issi.com ? 1-800-379-4774 rev. c 10/06/05 copyright ? 2005 integrated silicon solution, inc. all rights reserved. issi reserves the right to make changes to this speci fication and its products at any time without notice. issi assumes no liability arising out of the application or use of any information, products or services desc ribed herein. customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders fo r products. mini ball grid array package code: b (90-ball) mbga - 8mm x 13mm millimeters inches sym. min. typ. max. min. typ. max. n0. leads 90 a ? ? 1.20 ? ? 0.047 a1 0.30 0.35 0.40 0.012 0.014 0.016 d 12.90 13.00 13.10 0.508 0.512 0.516 d1 ? 11.20 ? ? 0.441 ? e 7.90 8.00 8.10 0.311 0.315 0.319 e1 ? 6.40 ? ? 0.252 ? e ? 0.80 ? ? 0.031 ? 9 8 7 6 5 4 3 2 1 1 2 3 4 5 6 7 8 9 a b c d e f g h j k l m n p r a b c d e f g h j k l m n p r ? 0.45 + 0.10/?0.05 (90x) d e e a1 seating plane a d1 e1 e notes: 1. controlling dimensions are in millimeters. 2. 0.8 mm ball pitch |
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